| PART |
Description |
Maker |
| PD300F12 |
FRD MODULE - 300A/1200V/trr:250nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| NTE5705 NTE5700 NTE5702 NTE5701 NTE5703 NTE5704 |
Industrial power module. Hybrid doubler. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. SCR AC switch. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. Single phase, all SCR bridge. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. Single phase, hybrid bridge, common anode, freewheeling diode. Max repetitive peak reverse voltage Vrrm = 1200V.
|
NTE[NTE Electronics]
|
| 1SS303 |
Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX.
|
TY Semiconductor Co., Ltd
|
| ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CAT28C64BHP-20 CAT28C64BHN-15 CAT28C64BHT-20 CAT28 |
PROFET - Smart High Side Switches
XWAY™ ADM6993
RF Switches; Package: PG-TSLP-7; P-0.1dB(min): 21.0 dBm; Switching Time(max): 4.0 µs; Isolation @1GHz: 32.0 dB; Insertion Loss @1GHz: 0.4 dB; Pmax: 21.0 dBm
HITFET, TEMPFET - Smart Low-Side Switches
IGBT Modules up to 1200V SixPACK; Package: AG-EASY2B-1; IC (max): 50.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EasyPACK 2B;
IGBT Modules up to 6500V Single; Package: A-IHV130-3; IC (max): 400.0 A; VCE(sat) (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
Single: N-Channel 600V MOSFETs; Package: PG-TO262-3; Technology: CoolMOS™; VDS (max): 600.0 V; RDS (on) (max) (@10V): 105.0 mOhm; ID (max): 31.0 A; RthJC (max): 0.5 K/W;
XWAY™ ADM5120P
Medium Power IF max = 500mA; Package: PG-SOT363-6; Configuration: Single; VR (max): 30.0 V; IF (max): 2,000.0 mA; CT (max): 60.0 pF; VF (max): 600.0 mV;
X-GOLD™213 - PMB8810
UMTS LNA; Package: PG-TSLP-16; Frequency Hz: 800 MHz 1900 MHz 2100 MHz; Gain (typ): 15.2 dB 16.5 dB 16.5 dB; F (typ): 1.2 dB 1.0 dB 1.1 dB; P-1dB (in): -12 -10 -11; I (typ): 3.5 mA 3.4 mA 3.5 mA;
SPOC - SPI Power Controller for Advanced Light Control; Package: PG-DSO-36; Channels: 5.0; LED mode: No; Cranking mode: No; Watchdog: No; Over Voltage Protection: 41.0 V
IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC (max): 75.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK™ 2;
128Kx8 EEPROM 128Kx8 EEPROM
ADM3120BX x8的EEPROM
IGBT Modules up to 6500V Single; Package: A-IHV130-3; I<sub>C </sub>(max): 400.0 A; V<sub>CE(sat)</sub> (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
|
Honeywell International, Inc.
NXP Semiconductors N.V.
Infineon Technologies AG
Amphenol, Corp.
Vectron International, Inc.
Advanced Analogic Technologies, Inc.
|
| RURG50120 FN3740 |
50A, 1200V Ultrafast Diode(50A, 1200V 瓒?揩??????)
50A, 1200V Ultrafast Diode(50A, 1200V 超快速二极管) 50 A, 1200 V, SILICON, RECTIFIER DIODE
50A 1200V Ultrafast Diode
From old datasheet system
|
HARRIS SEMICONDUCTOR
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| ISL9K8120P3 |
8A, 1200V StealthDual Diode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AB
8A, 1200V Stealth Dual Diode
8A, 1200V Stealth⑩ Dual Diode
8A, 1200V Stealth?/a> Dual Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 6MBP50RJ120 |
IGBT IPM R-series 1200V class 1200V / 50A 6 in one-package
|
List of Unclassifed Manufacturers
ETC
Fuji Electric
|
| IHW20T120 |
IGBTs & DuoPacks - 20A / 1200V IGBT and 9A / 1200V Diode in DuoPack
Soft Switching Series
|
INFINEON[Infineon Technologies AG]
|
| QIQ1245001 POWEREXINC-QIQ1245001 |
Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode
|
POWEREX[Powerex Power Semiconductors]
|
| HGTP5N120BN HGT1S5N120BNS FN4599 |
From old datasheet system
21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs
XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
